NTGD1100LT1G
- Manufacturer ON Semiconductor
- Part Number NTGD1100LT1G
- Description MOSFET 8V +/-3.3A P-Channel w/Level Shift
- Category MOSFET
Specifications
| Package | TSOP-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 8 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 600 mV |
| Width | 1.5 mm |
| Vgs - Gate-Source Voltage | 4.5 V |
| Type | MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.000705 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Id - Continuous Drain Current | 3.3 A |
| Length | 3 mm |
| Rds On - Drain-Source Resistance | 55 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTGD1100L |
| Height | 0.94 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 830 mW |
| Technology | Si |
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