NTDV20P06LT4G
- Manufacturer ON Semiconductor
- Part Number NTDV20P06LT4G
- Description MOSFET PFET 60V 15.5A 130R
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | P-Channel |
| Rds On - Drain-Source Resistance | 150 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 15 nC |
| Vgs - Gate-Source Voltage | 5 V |
| Part # Aliases | NTDV20P06LT4G-VF01 |
| Fall Time | 70 ns |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 P-Channel |
| Forward Transconductance - Min | 11 S |
| Id - Continuous Drain Current | 15.5 A |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 28 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTD20P06L |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 65 W |
| Rise Time | 90 ns |
| Technology | Si |
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