NTD4809NT4G
- Manufacturer ON Semiconductor
- Part Number NTD4809NT4G
- Description MOSFET NFET 30V 58A 9MOHM
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Width | 6.22 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Type | FETs - MOSFETs |
| Fall Time | 5.3 ns, 2.8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 9 S |
| Id - Continuous Drain Current | 11.5 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 9 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 15.1 ns, 25.3 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTD4809N |
| Height | 2.38 mm |
| Packaging | |
| Typical Turn-On Delay Time | 12.3 ns, 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W |
| Rise Time | 21.3 ns, 22.7 ns |
| Technology | Si |
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