NTD3055L104-1G
- Manufacturer ON Semiconductor
- Part Number NTD3055L104-1G
- Description MOSFET 60V 12A N-Channel
- Category MOSFET
Specifications
| Package | TO-251-4 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Width | 2.38 mm |
| Qg - Gate Charge | 7.4 nC |
| Vgs - Gate-Source Voltage | 5 V |
| Type | MOSFET |
| Fall Time | 40.5 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 9.1 S |
| Id - Continuous Drain Current | 12 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 104 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTD3055L104 |
| Height | 6.35 mm |
| Typical Turn-On Delay Time | 9.2 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 48 W |
| Rise Time | 104 ns |
| Technology | Si |
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