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NTD20N06T4G

  • Manufacturer ON Semiconductor
  • Part Number NTD20N06T4G
  • Description MOSFET 60V 20A N-Channel
  • Category MOSFET
Specifications
Package TO-252-3
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 60 V
Transistor Polarity N-Channel
Width 6.22 mm
Vgs - Gate-Source Voltage 20 V
Type MOSFET
Fall Time 37.1 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand ON Semiconductor
Unit Weight 0.139332 oz
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 175 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 13.2 S
Id - Continuous Drain Current 20 A
Length 6.73 mm
Rds On - Drain-Source Resistance 37.5 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 27.1 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series NTD20N06
Height 2.38 mm
Packaging
Typical Turn-On Delay Time 9.5 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 60 W
Rise Time 60.5 ns
Technology Si

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