NTD110N02RT4G
- Manufacturer ON Semiconductor
- Part Number NTD110N02RT4G
- Description MOSFET 24V 110A N-Channel
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 24 V |
| Transistor Polarity | N-Channel |
| Width | 6.22 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Type | MOSFET |
| Fall Time | 21 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ON Semiconductor |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 44 S |
| Id - Continuous Drain Current | 110 A |
| Length | 6.73 mm |
| Rds On - Drain-Source Resistance | 4.1 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 27 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | NTD110N02R |
| Height | 2.38 mm |
| Packaging | |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.88 W |
| Rise Time | 39 ns |
| Technology | Si |
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