Solve the future +1 910-626-85255 contact@business.com

NTB5405NT4G

  • Manufacturer ON Semiconductor
  • Part Number NTB5405NT4G
  • Description MOSFET NFET 40V 116A PB
  • Category MOSFET
Specifications
Package TO-263-3
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 40 V
Transistor Polarity N-Channel
Width 9.65 mm
Vgs - Gate-Source Voltage 20 V
Type MOSFET
Fall Time 70 ns, 42 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand ON Semiconductor
Unit Weight 0.139332 oz
Number of Channels 1 Channel
Configuration Single
Maximum Operating Temperature + 175 C
Transistor Type 1 N-Channel
Forward Transconductance - Min 32 S
Id - Continuous Drain Current 116 A
Length 10.29 mm
Rds On - Drain-Source Resistance 5.8 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 55 ns, 32 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series NTB5405N
Height 4.83 mm
Packaging
Typical Turn-On Delay Time 8.5 ns, 19 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 150 W
Rise Time 52 ns, 153 ns
Technology Si

Need pricing on NTB5405NT4G?

Tell us your quantity and target price. We reply the same business day.