NSV60101DMTWTBG
- Manufacturer ON Semiconductor
- Part Number NSV60101DMTWTBG
- Description Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
- Category Bipolar Transistors - BJT
Specifications
| Package | WDFN-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 250 |
| Unit Weight | 0.000600 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 180 MHz |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Continuous Collector Current | 1 A |
| Collector-Emitter Saturation Voltage | 0.2 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | NSS60101DMT |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.27 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 150 |
Need pricing on NSV60101DMTWTBG?
Tell us your quantity and target price. We reply the same business day.