NSV1C301ET4G
- Manufacturer ON Semiconductor
- Part Number NSV1C301ET4G
- Description Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V
- Category Bipolar Transistors - BJT
Specifications
| Package | DPAK-3 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 360 |
| Unit Weight | 0.009185 oz |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 120 MHz |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 6 A |
| RoHS | Y |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 0.115 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 140 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 33 W |
| DC Collector/Base Gain hfe Min | 120 |
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