NSTB60BDW1T1G
- Manufacturer ON Semiconductor
- Part Number NSTB60BDW1T1G
- Description Bipolar Transistors - Pre-Biased SS GP XSTR NPN
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Peak DC Collector Current | 150 mA |
| Transistor Polarity | NPN |
| Width | 1.25 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 80 |
| DC Current Gain hFE Max | 80 |
| Unit Weight | 0.000265 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 2 mm |
| RoHS | Y |
| Continuous Collector Current | - 150 mA |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | NSTB60 |
| Height | 0.9 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 256 mW |
| Typical Resistor Ratio | 2.13 |
| Typical Input Resistor | 22 kOhms |
| Brand | ON Semiconductor |
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