NSS60200DMTTBG
- Manufacturer ON Semiconductor
- Part Number NSS60200DMTTBG
- Description Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | WDFN-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 230 |
| Collector- Emitter Voltage VCEO Max | - 60 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 155 MHz |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Continuous Collector Current | 2 A |
| Collector-Emitter Saturation Voltage | - 0.365 V |
| Configuration | Dual |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.8 W |
| DC Collector/Base Gain hfe Min | 150 |
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