NSS60100DMTTBG
- Manufacturer ON Semiconductor
- Part Number NSS60100DMTTBG
- Description Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA
- Category Bipolar Transistors - BJT
Specifications
| Package | WDFN-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 140 |
| Unit Weight | 0.000600 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 155 MHz |
| RoHS | Y |
| Continuous Collector Current | 1 A |
| Collector-Emitter Saturation Voltage | - 0.3 V |
| Configuration | Dual |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.27 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 90 |
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