NSS40200UW6T1G
- Manufacturer ON Semiconductor
- Part Number NSS40200UW6T1G
- Description Bipolar Transistors - BJT WDFN6 2*2 LOW VCE (SAT) TR
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Packaging | Reel |
| Min. Pack | 3,000 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 7 V |
| Width | 2 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | - 40 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 140 MHz |
| Length | 2 mm |
| Maximum DC Collector Current | 2 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Collector-Emitter Saturation Voltage | - 0.1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | NSS40200UW6T1G |
| Height | 0.75 mm |
| Collector- Base Voltage VCBO | - 40 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 875 mW |
| DC Collector/Base Gain hfe Min | 250 |
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