NSS35200MR6T1G
- Manufacturer ON Semiconductor
- Part Number NSS35200MR6T1G
- Description Bipolar Transistors - BJT 2A 35V Low VCEsat
- Category Bipolar Transistors - BJT
Specifications
| Package | TSOP-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.5 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.000705 oz |
| Collector- Emitter Voltage VCEO Max | - 35 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz |
| Length | 3 mm |
| Maximum DC Collector Current | 2 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Collector-Emitter Saturation Voltage | - 0.26 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | NSS35200MR6T1G |
| Height | 0.94 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 55 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 mW |
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