NSBC143EPDXV6T1G
- Manufacturer ON Semiconductor
- Part Number NSBC143EPDXV6T1G
- Description Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
- Category Bipolar Transistors - Pre-Biased
Specifications
| Package | SOT-563-6 |
| Min. Pack | 1 |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | PNP |
| Width | 1.2 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - Pre-Biased |
| DC Collector/Base Gain hfe Min | 15 |
| DC Current Gain hFE Max | 15 |
| Unit Weight | 0.000106 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Length | 1.6 mm |
| RoHS | Y |
| Continuous Collector Current | 0.1 A |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Subcategory | Transistors |
| Series | NSBC143EPDXV6 |
| Height | 0.55 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 357 mW |
| Typical Resistor Ratio | 1 |
| Typical Input Resistor | 4.7 kOhms |
| Brand | ON Semiconductor |
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