NPT2021
- Manufacturer MACOM
- Part Number NPT2021
- Description RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT
- Category RF JFET Transistors
Specifications
| Package | TO-272 |
| Packaging | Tray |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 160 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 1.8 V |
| Moisture Sensitive | Yes |
| Mounting Style | Screw Mount |
| Product Category | RF JFET Transistors |
| Vgs - Gate-Source Breakdown Voltage | 3 V |
| Brand | MACOM |
| Unit Weight | 0.067412 oz |
| Gain | 14.2 dB |
| Product Type | RF JFET Transistors |
| Maximum Operating Temperature | + 85 C |
| Transistor Type | HEMT |
| Operating Temperature Range | - 40 C to + 85 C |
| Id - Continuous Drain Current | 14 mA |
| Output Power | 45 W |
| Rds On - Drain-Source Resistance | 340 mOhms |
| Operating Frequency | 2.5 GHz |
| Configuration | Single |
| Subcategory | Transistors |
| Minimum Operating Temperature | - 40 C |
| Technology | GaN Si |
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