NP90N06VLG-E1-AY
- Manufacturer Renesas Electronics
- Part Number NP90N06VLG-E1-AY
- Description MOSFET POWER DEVICE E AUTO MOS MP-3ZP UMOS4
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 90 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Renesas Electronics |
| Unit Weight | 0.011993 oz |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 66 S |
| Id - Continuous Drain Current | 90 A |
| RoHS | Y |
| Typical Turn-Off Delay Time | 76 ns |
| Subcategory | MOSFETs |
| Typical Turn-On Delay Time | 17 ns |
| Pd - Power Dissipation | 105 W |
| Rise Time | 13 ns |
| Technology | Si |
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