NGTG12N60TF1G
- Manufacturer ON Semiconductor
- Part Number NGTG12N60TF1G
- Description IGBT Transistors 600V 12A IGBT TO-3PF
- Category IGBT Transistors
Specifications
| Package | TO-3PF-3L |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Gate-Emitter Leakage Current | 100 nA |
| Series | NGTG12N60TF1G |
| Brand | ON Semiconductor |
| Pd - Power Dissipation | 54 W |
| Continuous Collector Current at 25 C | 24 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Unit Weight | 0.280428 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Continuous Collector Current | 20 A |
| Technology | Si |
| RoHS | Y |
Need pricing on NGTG12N60TF1G?
Tell us your quantity and target price. We reply the same business day.