NGTB30N120IHRWG
- Manufacturer ON Semiconductor
- Part Number NGTB30N120IHRWG
- Description IGBT Transistors 1200V/30A RC IGBT FSII
- Category IGBT Transistors
Specifications
| Package | TO-247 |
| Packaging | Tube |
| Min. Pack | 1 |
| Collector-Emitter Saturation Voltage | 2.2 V |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Series | NGTB30N120IHR |
| Maximum Operating Temperature | + 175 C |
| Brand | ON Semiconductor |
| Pd - Power Dissipation | 384 W |
| Continuous Collector Current at 25 C | 60 A |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Unit Weight | 0.229281 oz |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 25 V |
| Gate-Emitter Leakage Current | 100 nA |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Configuration | Single |
| Technology | Si |
| RoHS | Y |
Need pricing on NGTB30N120IHRWG?
Tell us your quantity and target price. We reply the same business day.