MT3S16U(TE85L,F)
- Manufacturer Toshiba
- Part Number MT3S16U(TE85L,F)
- Description RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz
- Category RF Bipolar Transistors
Specifications
| Package | SC-70-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 2 V |
| Type | UHF Band Oscillator and Amplifier |
| Packaging | |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 80 |
| DC Current Gain hFE Max | 140 |
| Unit Weight | 0.000219 oz |
| Collector- Emitter Voltage VCEO Max | 5 V |
| Configuration | Single |
| Maximum Operating Temperature | + 125 C |
| Transistor Type | Bipolar |
| Operating Temperature Range | - 55 C to + 125 C |
| Operating Frequency | 4 GHz (Typ) |
| RoHS | Y |
| Continuous Collector Current | 60 mA |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | MT3S16 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 10 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 100 mW |
| Technology | Si |
| Brand | Toshiba |
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