MT3S113(TE85L,F)
- Manufacturer Toshiba
- Part Number MT3S113(TE85L,F)
- Description RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
- Category RF Bipolar Transistors
Specifications
| Package | TO-236-3 |
| Packaging | Reel |
| Min. Pack | 3,000 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 0.6 V |
| Product Category | RF Bipolar Transistors |
| DC Collector/Base Gain hfe Min | 200 |
| Collector- Emitter Voltage VCEO Max | 5.3 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Bipolar |
| Maximum DC Collector Current | 100 mA |
| Operating Frequency | 12.5 GHz |
| RoHS | Y |
| Continuous Collector Current | 100 mA |
| Product Type | RF Bipolar Transistors |
| Subcategory | Transistors |
| Series | MT3S113 |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 800 mW |
| Technology | SiGe |
| Brand | Toshiba |
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