MRFX600GSR5
- Manufacturer NXP Semiconductors
- Part Number MRFX600GSR5
- Description RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
- Category RF MOSFET Transistors
Specifications
| Package | NI-780GS-4L |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 193 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Part # Aliases | 935376368178 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Number of Channels | 2 Channel |
| Gain | 26.4 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 32 A |
| Output Power | 600 W |
| Operating Frequency | 1.8 MHz to 400 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | MRFX600 |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 1.333 kW |
| Technology | Si |
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