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MRFX1K80HR5

  • Manufacturer NXP Semiconductors
  • Part Number MRFX1K80HR5
  • Description RF MOSFET Transistors 65V LDMOS Transistor
  • Category RF MOSFET Transistors
Specifications
Package NI-1230H-4
Min. Pack 1
Vds - Drain-Source Breakdown Voltage - 500 mV, 179 V
Transistor Polarity Dual N-Channel
Vgs - Gate-Source Voltage - 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Part # Aliases 935351859178
Type RF Power MOSFET
Mounting Style SMD/SMT
Product Category RF MOSFET Transistors
Brand NXP Semiconductors
Unit Weight 0.464156 oz
Number of Channels 2 Channel
Gain 25.1 dB
Product Type RF MOSFET Transistors
Maximum Operating Temperature + 150 C
Forward Transconductance - Min 44.7 S
Id - Continuous Drain Current 43 A
Output Power 1.8 kW
Operating Frequency 1.8 MHz to 400 MHz
RoHS Y
Subcategory MOSFETs
Series MRFX1K80
Packaging
Minimum Operating Temperature - 40 C
Pd - Power Dissipation 2247 W
Technology Si

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