MRFE8VP8600HR5
- Manufacturer NXP Semiconductors
- Part Number MRFE8VP8600HR5
- Description RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
- Category RF MOSFET Transistors
Specifications
| Package | NI-1230H-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 115 V |
| Transistor Polarity | Dual N-Channel |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Part # Aliases | 935318365178 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0.464343 oz |
| Number of Channels | 2 Channel |
| Gain | 21 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 2.8 A |
| Output Power | 140 W |
| Operating Frequency | 470 MHz to 860 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | MRFE8VP8600H |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 1.25 kW |
| Technology | Si |
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