MRF8VP13350NR3
- Manufacturer NXP Semiconductors
- Part Number MRF8VP13350NR3
- Description RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 700-1300 MHz, 350 W CW, 50 V
- Category RF MOSFET Transistors
Specifications
| Package | OM-780-4 |
| Packaging | Reel |
| Min. Pack | 250 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 100 V |
| Transistor Polarity | Dual N-Channel |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.3 V |
| Moisture Sensitive | Yes |
| Part # Aliases | 935316089528 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0.108111 oz |
| Number of Channels | 2 Channel |
| Gain | 19.2 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 1.3 A |
| Output Power | 350 W |
| Operating Frequency | 700 MHz to 1300 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | MRF8VP13350 |
| Minimum Operating Temperature | - 40 C |
| Technology | Si |
Need pricing on MRF8VP13350NR3?
Tell us your quantity and target price. We reply the same business day.