MRF6V2150NBR1
- Manufacturer NXP Semiconductors
- Part Number MRF6V2150NBR1
- Description RF MOSFET Transistors VHV6 150W
- Category RF MOSFET Transistors
Specifications
| Package | TO-272-4 |
| Packaging | Reel |
| Min. Pack | 500 |
| Vds - Drain-Source Breakdown Voltage | 110 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | - 0.5 V, 12 V |
| Vgs th - Gate-Source Threshold Voltage | 1.62 V |
| Width | 9.07 mm |
| Moisture Sensitive | Yes |
| Part # Aliases | 935316841528 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0.067412 oz |
| Gain | 25 dB |
| Configuration | Single Dual Drain Dual Gate |
| Maximum Operating Temperature | + 150 C |
| Length | 23.67 mm |
| Output Power | 150 W |
| Operating Frequency | 220 MHz |
| RoHS | E |
| Product Type | RF MOSFET Transistors |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | MRF6V2150N |
| Height | 2.64 mm |
| Minimum Operating Temperature | - 65 C |
| Technology | Si |
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