MRF6V2010GNR1
- Manufacturer NXP Semiconductors
- Part Number MRF6V2010GNR1
- Description RF MOSFET Transistors VHV6 10W TO270-2GN
- Category RF MOSFET Transistors
Specifications
| Package | TO-270-2 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 110 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Moisture Sensitive | Yes |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | 935321298528 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0.019330 oz |
| Gain | 23.9 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Output Power | 10 W |
| Operating Frequency | 450 MHz |
| RoHS | E |
| Configuration | Single |
| Subcategory | MOSFETs |
| Packaging | |
| Technology | Si |
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