MRF1535NT1
- Manufacturer NXP Semiconductors
- Part Number MRF1535NT1
- Description RF MOSFET Transistors RF LDMOS FET TO-272N
- Category RF MOSFET Transistors
Specifications
| Package | TO-272-Wrap-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.6 V |
| Width | 6.4 mm |
| Moisture Sensitive | Yes |
| Part # Aliases | |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | |
| Gain | 13.5 dB |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 6 A |
| Length | 23.67 mm |
| Output Power | 35 W |
| Rds On - Drain-Source Resistance | 700 mOhms |
| Operating Frequency | 520 MHz |
| RoHS | E |
| Product Type | RF MOSFET Transistors |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | MRF1535N |
| Height | 2.74 mm |
| Packaging | |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 135 W |
| Technology | Si |
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