MRF101BN
- Manufacturer NXP Semiconductors
- Part Number MRF101BN
- Description RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
- Category RF MOSFET Transistors
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 133 V |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Voltage | - 6 V, + 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.7 V |
| Part # Aliases | 935377234129 |
| Type | RF Power MOSFET |
| Mounting Style | Through Hole |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Number of Channels | 1 Channel |
| Gain | 21.1 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Forward Transconductance - Min | 7.1 S |
| Id - Continuous Drain Current | 8.8 A |
| Output Power | 100 W |
| Operating Frequency | 1.8 MHz to 250 MHz |
| Subcategory | MOSFETs |
| Series | MRF101 |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 182 W |
| Technology | Si |
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