MRF085HR5
- Manufacturer NXP Semiconductors
- Part Number MRF085HR5
- Description RF MOSFET Transistors High Ruggedness N--Channel
- Category RF MOSFET Transistors
Specifications
| Package | NI-650H-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 133 V |
| Transistor Polarity | Dual N-Channel |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Part # Aliases | 935351494178 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0 oz |
| Number of Channels | 2 Channel |
| Gain | 25.6 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 210 mA |
| Output Power | 85 W |
| Operating Frequency | 1.8 MHz to 1215 MHz |
| RoHS | Y |
| Subcategory | MOSFETs |
| Series | MRF085H |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 235 W |
| Technology | Si |
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