MPS6519
- Manufacturer Central Semiconductor
- Part Number MPS6519
- Description Bipolar Transistors - BJT PNP Gen Pur SS
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 4 V |
| Width | 4.19 mm |
| Part # Aliases | MPS6519 TIN/LEAD |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 250 at 2 mA, 10 V |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | 25 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 5.21 mm |
| Maximum DC Collector Current | 100 mA |
| RoHS | N |
| Continuous Collector Current | 0.2 A |
| Collector-Emitter Saturation Voltage | 500 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MPS65 |
| Height | 5.33 mm |
| Collector- Base Voltage VCBO | 25 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 625 mW |
| DC Collector/Base Gain hfe Min | 150 at 100 mA, 10 V |
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