MPS6513
- Manufacturer Central Semiconductor
- Part Number MPS6513
- Description Bipolar Transistors - BJT NPN Gen Pur SS
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Min. Pack | 5,000 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 4 V |
| Width | 4.19 mm |
| Product Category | Bipolar Transistors - BJT |
| Brand | Central Semiconductor |
| DC Current Gain hFE Max | 90 at 2 mA, 10 V |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 5.21 mm |
| Maximum DC Collector Current | 0.1 A |
| RoHS | Y |
| Continuous Collector Current | 0.45 A |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MPS65 |
| Height | 5.33 mm |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 40 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 625 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 90 at 2 mA, 10 V, 60 at 100 mA, 10 V |
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