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MMSTA56Q-7

  • Manufacturer Diodes Incorporated
  • Part Number MMSTA56Q-7
  • Description Bipolar Transistors - BJT GenPurpTranstr
  • Category Bipolar Transistors - BJT
Specifications
Package SOT-323-3
Packaging Reel
Min. Pack 3,000
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 4 V
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
Collector- Emitter Voltage VCEO Max - 80 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 50 MHz
Qualification AEC-Q101
Maximum DC Collector Current - 500 mA
RoHS Y
Continuous Collector Current - 500 mA
Collector-Emitter Saturation Voltage - 0.25 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series MMSTA56Q
Mounting Style SMD/SMT
Collector- Base Voltage VCBO - 80 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 200 mW
Technology Si
DC Collector/Base Gain hfe Min 100

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