MMST4126-7-F
- Manufacturer Diodes Incorporated
- Part Number MMST4126-7-F
- Description Bipolar Transistors - BJT -25V 200mW
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-323-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 4 V |
| Width | 1.35 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 360 |
| Unit Weight | 0.000176 oz |
| Collector- Emitter Voltage VCEO Max | - 25 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| Length | 2.2 mm |
| Maximum DC Collector Current | 0.2 A |
| RoHS | Y |
| Continuous Collector Current | - 0.2 A |
| Collector-Emitter Saturation Voltage | - 0.4 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MMST41 |
| Height | 1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 25 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
| DC Collector/Base Gain hfe Min | 120 |
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