MMRF1312HSR5
- Manufacturer NXP Semiconductors
- Part Number MMRF1312HSR5
- Description RF MOSFET Transistors RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V
- Category RF MOSFET Transistors
Specifications
| Package | NI-1230S-4S-4 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | - 500 mV, 112 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.8 V |
| Vgs - Gate-Source Voltage | - 6 V, 10 V |
| Part # Aliases | 935316061178 |
| Type | RF Power MOSFET |
| Mounting Style | SMD/SMT |
| Product Category | RF MOSFET Transistors |
| Brand | NXP Semiconductors |
| Unit Weight | 0.300472 oz |
| Number of Channels | 2 Channel |
| Gain | 19.6 dB |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 2.6 A |
| Output Power | 1 kW |
| Operating Frequency | 900 MHz to 1.215 GHz |
| Subcategory | MOSFETs |
| Packaging | |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 1.053 kW |
| Technology | Si |
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