MMIX1T660N04T4
- Manufacturer IXYS
- Part Number MMIX1T660N04T4
- Description Discrete Semiconductor Modules DISC MSFT SMPD PKG-HIPERFETMSF
- Category Discrete Semiconductor Modules
Specifications
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Vgs - Gate-Source Voltage | 15 V |
| Type | Trench T4 |
| Fall Time | 260 ns |
| Mounting Style | SMD/SMT |
| Product | Power MOSFET Modules |
| Product Category | Discrete Semiconductor Modules |
| Brand | IXYS |
| Tradename | TrenchT4 |
| Product Type | Discrete Semiconductor Modules |
| Maximum Operating Temperature | + 175 C |
| Id - Continuous Drain Current | 660 A |
| Rds On - Drain-Source Resistance | 850 uOhms |
| RoHS | Y |
| Configuration | Single |
| Typical Turn-Off Delay Time | 386 ns |
| Subcategory | Discrete Semiconductor Modules |
| Typical Turn-On Delay Time | 40 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 830 W |
| Rise Time | 430 ns |
Need pricing on MMIX1T660N04T4?
Tell us your quantity and target price. We reply the same business day.