MMIX1T550N055T2
- Manufacturer IXYS
- Part Number MMIX1T550N055T2
- Description MOSFET SMPD MOSFETs Power Device
- Category MOSFET
Specifications
| Package | SMPD-24 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 3.8 V |
| Width | 23.25 mm |
| Qg - Gate Charge | 595 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Type | TrenchT2 GigaMOS Power MOSFET |
| Fall Time | 230 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | IXYS |
| Tradename | HiPerFET |
| Product Type | MOSFET |
| Maximum Operating Temperature | + 175 C |
| Forward Transconductance - Min | 90 S |
| Id - Continuous Drain Current | 550 A |
| Length | 25.25 mm |
| Rds On - Drain-Source Resistance | 1.3 mOhms |
| RoHS | Y |
| Typical Turn-Off Delay Time | 90 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | MMIX1T550N055 |
| Height | 5.7 mm |
| Typical Turn-On Delay Time | 45 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 830 W |
| Rise Time | 40 ns |
| Technology | Si |
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