Solve the future +1 910-626-85255 contact@business.com

MMDT3946LP4-7

  • Manufacturer Diodes Incorporated
  • Part Number MMDT3946LP4-7
  • Description Bipolar Transistors - BJT BIPOLAR COMP.
  • Category Bipolar Transistors - BJT
Specifications
Package DFN1310H4-6
Min. Pack 1
Transistor Polarity NPN, PNP
Emitter- Base Voltage VEBO - 5 V, 6 V
Width 1 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
Collector- Emitter Voltage VCEO Max 40 V
Product Type BJTs - Bipolar Transistors
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 300 MHz, 250 MHz
Length 1.3 mm
Maximum DC Collector Current - 200 mA, 200 mA
RoHS Y
Collector-Emitter Saturation Voltage - 400 mV, 300 mV
Configuration Dual
Subcategory Transistors
Series MMDT39
Height 0.35 mm
Packaging
Collector- Base Voltage VCBO - 40 V, 60 V
Pd - Power Dissipation 200 mW

Need pricing on MMDT3946LP4-7?

Tell us your quantity and target price. We reply the same business day.