MMDT3946LP4-7
- Manufacturer Diodes Incorporated
- Part Number MMDT3946LP4-7
- Description Bipolar Transistors - BJT BIPOLAR COMP.
- Category Bipolar Transistors - BJT
Specifications
| Package | DFN1310H4-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | - 5 V, 6 V |
| Width | 1 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz, 250 MHz |
| Length | 1.3 mm |
| Maximum DC Collector Current | - 200 mA, 200 mA |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | - 400 mV, 300 mV |
| Configuration | Dual |
| Subcategory | Transistors |
| Series | MMDT39 |
| Height | 0.35 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 40 V, 60 V |
| Pd - Power Dissipation | 200 mW |
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