MMDT2222A-7-F
- Manufacturer Diodes Incorporated
- Part Number MMDT2222A-7-F
- Description Bipolar Transistors - BJT 40V 200mW
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 1.35 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 300 |
| Unit Weight | 0.000212 oz |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Length | 2.2 mm |
| Maximum DC Collector Current | 0.6 A |
| RoHS | Y |
| Continuous Collector Current | 0.6 A |
| Collector-Emitter Saturation Voltage | 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MMDT22 |
| Height | 1 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 75 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 200 mW |
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