MMBTA56LT1G-HFE
- Manufacturer ON Semiconductor
- Part Number MMBTA56LT1G-HFE
- Description Bipolar Transistors - BJT SS SOT23 DR XSTR PNP 80V
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 4 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Collector- Emitter Voltage VCEO Max | - 80 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 50 MHz |
| RoHS | Y |
| Continuous Collector Current | 0.5 A |
| Collector-Emitter Saturation Voltage | - 0.25 V |
| Configuration | Single |
| Subcategory | Transistors |
| Series | MMBTA56L |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 80 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 225 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 100 |
Need pricing on MMBTA56LT1G-HFE?
Tell us your quantity and target price. We reply the same business day.