MMBT6520LT1G
- Manufacturer ON Semiconductor
- Part Number MMBT6520LT1G
- Description Bipolar Transistors - BJT 500mA 350V PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 1.3 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 200 |
| Unit Weight | |
| Collector- Emitter Voltage VCEO Max | - 350 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 200 MHz |
| Length | 2.9 mm |
| Maximum DC Collector Current | 0.5 A |
| RoHS | Y |
| Continuous Collector Current | - 0.5 A |
| Collector-Emitter Saturation Voltage | - 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MMBT6520L |
| Height | 0.94 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 350 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 225 mW |
| DC Collector/Base Gain hfe Min | 20 |
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