MMBT5401Q-7-F
- Manufacturer Diodes Incorporated
- Part Number MMBT5401Q-7-F
- Description Bipolar Transistors - BJT SS Hi Voltage Trans
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-23-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 240 at - 10 mA, - 5 V |
| Unit Weight | 0.000282 oz |
| Collector- Emitter Voltage VCEO Max | - 150 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 300 MHz |
| Qualification | AEC-Q101 |
| RoHS | Y |
| Continuous Collector Current | - 600 mA |
| Collector-Emitter Saturation Voltage | - 200 mV |
| Configuration | Single |
| Subcategory | Transistors |
| Series | MMBT5401 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 160 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 310 mW |
| DC Collector/Base Gain hfe Min | 60 at - 10 mA, - 5 V |
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