MJE5851G
- Manufacturer ON Semiconductor
- Part Number MJE5851G
- Description Bipolar Transistors - BJT 8A 350V 80W PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 6 V |
| Width | 4.83 mm |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.211644 oz |
| Collector- Emitter Voltage VCEO Max | 350 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Length | 10.53 mm |
| Maximum DC Collector Current | 8 A |
| RoHS | Y |
| Continuous Collector Current | 8 A |
| Collector-Emitter Saturation Voltage | 2 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MJE5851 |
| Height | 15.75 mm |
| Collector- Base Voltage VCBO | 400 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 80 W |
| DC Collector/Base Gain hfe Min | 15 |
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