MJD45H11TM
- Manufacturer ON Semiconductor / Fairchild
- Part Number MJD45H11TM
- Description Bipolar Transistors - BJT PNP Epitaxial Sil
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Width | 6.1 mm |
| Part # Aliases | MJD45H11TM_NL |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| DC Current Gain hFE Max | 60 |
| Unit Weight | 0.016579 oz |
| Collector- Emitter Voltage VCEO Max | - 80 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 40 MHz |
| Length | 6.6 mm |
| Maximum DC Collector Current | 8 A |
| RoHS | E |
| Continuous Collector Current | - 8 A |
| Collector-Emitter Saturation Voltage | - 1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MJD45H11 |
| Height | 2.3 mm |
| Packaging | |
| Collector- Base Voltage VCBO | - 5 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 20 W |
| DC Collector/Base Gain hfe Min | 40 |
Need pricing on MJD45H11TM?
Tell us your quantity and target price. We reply the same business day.