MJD31CT4G
- Manufacturer ON Semiconductor / Fairchild
- Part Number MJD31CT4G
- Description Bipolar Transistors - BJT 3A 100V 15W NPN
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 6.22 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor / Fairchild |
| Unit Weight | 0.016579 oz |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 3 MHz |
| Length | 6.73 mm |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MJD31C |
| Height | 2.38 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 1.56 W |
| DC Collector/Base Gain hfe Min | 25 |
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