MJD31CQ-13
- Manufacturer Diodes Incorporated
- Part Number MJD31CQ-13
- Description Bipolar Transistors - BJT Pwr Mid Perf Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 6 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 50 |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 3 MHz |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 3 A |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 15 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 10 |
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