MJD3055T4
- Manufacturer STMicroelectronics
- Part Number MJD3055T4
- Description Bipolar Transistors - BJT NPN Gen Pur Switch
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 6.2 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | STMicroelectronics |
| DC Current Gain hFE Max | 100 |
| Unit Weight | 0.063493 oz |
| Collector- Emitter Voltage VCEO Max | 60 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 2 MHz |
| Length | 6.6 mm |
| Maximum DC Collector Current | 10 A |
| RoHS | Y |
| Continuous Collector Current | 10 A |
| Collector-Emitter Saturation Voltage | 1.1 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MJD3055 |
| Height | 2.4 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 70 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 20 W |
| DC Collector/Base Gain hfe Min | 20 |
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