MJD253-1G
- Manufacturer ON Semiconductor
- Part Number MJD253-1G
- Description Bipolar Transistors - BJT 4A 100V 12.5W PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | IPAK-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 7 V |
| Width | 6.22 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| Unit Weight | 0.024727 oz |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 40 MHz |
| Length | 6.73 mm |
| Maximum DC Collector Current | 4 A |
| RoHS | Y |
| Continuous Collector Current | 4 A |
| Collector-Emitter Saturation Voltage | 0.6 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | MJD253 |
| Height | 2.38 mm |
| Collector- Base Voltage VCBO | 100 V |
| Minimum Operating Temperature | - 65 C |
| Pd - Power Dissipation | 12.5 W |
| DC Collector/Base Gain hfe Min | 40 |
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