MIEB101H1200EH
- Manufacturer IXYS
- Part Number MIEB101H1200EH
- Description IGBT Modules IGBT Module H Bridge
- Category IGBT Modules
Specifications
| Package | E3-Pack |
| Packaging | Bulk |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 200 nA |
| Continuous Collector Current at 25 C | 183 A |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Mounting Style | Chassis Mount |
| Series | MIEB101H1200EH |
| Brand | IXYS |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 630 W |
| Configuration | Half Bridge |
| Maximum Operating Temperature | + 125 C |
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