MBT3906DW1T2G
- Manufacturer ON Semiconductor
- Part Number MBT3906DW1T2G
- Description Bipolar Transistors - BJT Dual PNP Bipolar Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-363-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Part # Aliases | MBT3906DW1T1G |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ON Semiconductor |
| DC Current Gain hFE Max | 300 |
| Unit Weight | 0.000265 oz |
| Collector- Emitter Voltage VCEO Max | - 40 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 250 MHz |
| RoHS | Y |
| Continuous Collector Current | - 200 mA |
| Collector-Emitter Saturation Voltage | - 0.4 V |
| Configuration | Dual |
| Subcategory | Transistors |
| Series | MBT3906DW1 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 40 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 150 mW |
| Technology | Si |
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